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FDW254P
August 2000 PRELIMINARY
FDW254P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V).
Features
* -9.2 A, -20 V. RDS(ON) = 0.012 @ VGS = -4.5 V RDS(ON) = 0.015 @ VGS = -2.5 V RDS(ON) = 0.0215 @ VGS = -1.8 V
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
* Rds ratings for use with 1.8 V logic * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
D S S D G S S D
Pin 1
5 6 7 8
4 3 2 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
-20 8
(Note 1)
Units
V V A W C
-9.2 -50 1.3 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
96 208
C/W
Package Marking and Ordering Information
Device Marking 254P Device FDW254P Reel Size 13'' Tape width 12mm Quantity 3000 units
2000 Fairchild Semiconductor Corporation
FDW254P Rev C (W)
FDW254P
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = -8 V, VGS = 8 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-11 -1 -100 100 -0.4 -0.6 2 9 11 14 12 -50 54 5878 994 559 15 15 210 100 VDS = -10 V, VGS = -4.5 V ID = -9.2 A, 60 7 13 -1.2
(Note 2)
mV/C A nA nA V mV/C 12 15 21.5 18 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -9.2 A ID = -7.9 A VGS = -2.5 V, ID = -6.5 A VGS = -1.8 V, VGS=-4.5 V, ID =-9.2 A, TJ=125C VGS = -4.5 V, VDS = -5 V, VDS = -5 V ID = -9.2 A
-1.5
ID(on) gFS Ciss Coss Crss td(on) Tr Td(off) tf Qg Qgs Qgd IS VSD
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
A S pF pF pF 27 27 336 160 96 ns ns ns ns nC nC nC A V
Dynamic Characteristics
VDS = -10 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -10 V, VGS = -4.5 V,
ID = -1 A, RGEN = 6
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.2 A -0.5 -1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 96C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
b) RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDW254P Rev. C (W)
FDW254P
Typical Characteristics
50 VGS = -4.5V 40 -3.0V -2.5V 30 -2.0V -1.5V
2 VGS = -1.5V 1.8 1.6 1.4 -2.0V -2.5V -3.0V -3.5V -4.5V
20
1.2
10
1 0.8
0 0.5 1 1.5 2
0 -VDS, DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.035
1.5 1.4 1.3 ID = -9.2A VGS = -4.5V
ID = -4.6A 0.03 0.025
1.2 1.1 1 0.9 0.01 0.8 0.7 -50 -25 0 25 50 75 100
o
0.02 0.015 TA = 125 C
o
TA = 25 C 0.005 125 150 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
50 VDS = -5V 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
o
25 C 125 C
o
o
VGS = 0V
10 TA = 125 C
o
30
1 25 C
o
20
0.1 -55 C
o
10
0.01
0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V)
0.001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW254P Rev. C (W)
FDW254P
Typical Characteristics
5 ID = -9.2A 4
VDS = -6V -8V -10V
10000
f = 1 MHz VGS = 0 V CISS
8000
3
6000
2
4000 COSS 2000 CRSS
0 10 20 30 40 50 60 70
1
0 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT 10 10s 1 VGS = -4.5V SINGLE PULSE RJA = 208 C/W TA = 25 C 0.01 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0
o o
Figure 8. Capacitance Characteristics.
50
100s 10ms 100ms 1s
40
SINGLE PULSE RJA = 208C/W TA = 25C
30
DC 20
0.1
10
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) + RJA RJA = 208 C/W P(pk) t1 t2
SINGLE PULSE
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 t1, TIME (sec) 1 10 100 1000
0.001 0.0001 0.001 0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW254P Rev. C (W)
TSSOP-8 Package Dimensions
TSSOP-8 (FS PKG Code S4)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.0334
January 2000, Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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